Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching.

ABSTRACT: Using a conventional Raman experimental apparatus, we demonstrate that the photoluminescent (PL) yield from ultrasonication-exfoliated transition metal dichalcogenides (TMDs) (MoS₂ and WS₂) can be increased by up to 8-fold by means of a laser etching procedure. This laser etching process allows us to controllably pattern and reduce the number of layers of the solution-exfoliated material, overcoming the key drawback to solvent-based exfoliation of two-dimensional (2D) semiconducting materials for applications in optoelectronics. The successful laser thinning of the exfoliated 2D crystals was investigated systematically by changes in both Raman and PL spectra. A simple proof-of-principle of the scalability of this laser etching technique for solution-exfoliated TMD cry

SUBMITTER: Bissett MA 

PROVIDER: S-EPMC6641068 | biostudies-literature | 2017 Feb

REPOSITORIES: biostudies-literature