Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires.

ABSTRACT: Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various promising applications. In the present work, we synthesized single-crystalline zinc blende phase GaP and GaAs NWs using the chemical vapor transport method and visualized their bending strains (up to 3%) with high precision using the nanobeam electron diffraction technique. The strain mapping at all crystallographic axes revealed that (i) maximum strain exists along the growth direction ([111]) with the tensile and compressive strains at the outer and inner parts, respectively; (ii) the opposite strains appeared a

SUBMITTER: Im HS 

PROVIDER: S-EPMC6641494 | biostudies-literature | 2018 Mar

REPOSITORIES: biostudies-literature