Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment.

ABSTRACT: GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leadin

SUBMITTER: Fang X 

PROVIDER: S-EPMC6641701 | biostudies-literature | 2018 Apr

REPOSITORIES: biostudies-literature