How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

ABSTRACT: Black phosphorus (BP) is a recently rediscovered layered two-dimensional (2D) semiconductor with a direct band gap (0.35-2 eV), high hole mobility (300-5000 cm²/Vs), and transport anisotropy. In this paper, we systematically investigated the effects of metal-semiconductor interface/contacts on the performance of BP Schottky barrier transistors. First, a "clean" metal-BP contact is formed with boron nitride (BN) passivation. It is found that the contact resistance of the clean metal-BP contact is seven times less than the previously reported values. As a result, high-performance top-gate BP transistors show a record high ON-state drain current (I _on) of 940 μA/μm. Second, BN tunneling barriers are formed at the source/drain contacts to help understand the abnorm

SUBMITTER: Yang L 

PROVIDER: S-EPMC6641731 | biostudies-literature | 2017 Aug

REPOSITORIES: biostudies-literature