Thermodynamic Studies of β-Ga₂O₃ Nanomembrane Field-Effect Transistors on a Sapphire Substrate.

ABSTRACT: The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate β-Ga₂O₃ on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO₂/Si substrate, the temperature rise above room temperature of β-Ga₂O₃ on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. Both thermorefle

SUBMITTER: Zhou H 

PROVIDER: S-EPMC6645553 | biostudies-literature | 2017 Nov

REPOSITORIES: biostudies-literature