Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics.

ABSTRACT: Zinc oxide (ZnO) thin-film transistors (TFTs) have many promising applications in the areas of logic circuits, displays, ultraviolet detectors, and biosensors due to their high performances, facile fabrication processing, and low cost. The solution method is an important technique for low-cost and large fabrication of oxide semiconductor TFTs. However, a key challenge of solution-processable ZnO TFTs is the relatively high processing temperature (≥500 °C) for achieving high carrier mobility. Here, facile, low-cost, and solution-processable ZnO TFTs were fabricated under the annealing temperature of ≤300 °C. Dense and polycrystalline ZnO films were deposited by the spin-coating method. The ZnO TFTs showed the maximum electron mobility of 11 cm²/V s and a high on/off ratio of >10<

SUBMITTER: Jiang L 

PROVIDER: S-EPMC6645662 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature