Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory.

ABSTRACT: In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 10⁸ V/m. The current transport mechanism was explained from the output characteristics using the Fowler-Nordheim tunneling theory. Capacitance-voltage (C-V) measurements have been employed

SUBMITTER: Sarkar KJ 

PROVIDER: S-EPMC6647943 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature