Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon.

ABSTRACT: Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely appraised for its advantages of doping nanoelectronic devices for applications in the complementary metal-oxide-semiconductor transistor (CMOS) industry. However, defects introduced by SAMM-doping will limit the performance of the devices. Previously, we have found that SAMM-doping can bring carbon impurities into the silicon substrate and these unwanted carbon impurities can deactivate phosphorus dopants by forming an interstitial carbon (C_i)-substitutional phosphorus (C_i-P_s) complex. Herein, to develop a defect-free SAMM-doping process, the generation and annihilation of C_i-related defects are investigated by extending the thermal annealing time from 2 to 10 min

SUBMITTER: Gao X 

PROVIDER: S-EPMC6648394 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature