Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors.

ABSTRACT: One-dimensional semiconductor nanowires often contain polytypic structures, owing to the co-existence of different crystal phases. Therefore, understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevices. Herein, we synthesized nanowires of typical III-V semiconductors, namely, gallium phosphide and gallium arsenide by using the chemical vapor transport method. The growth directions ([111] and [211]) could be switched by changing the experimental conditions, such as H₂ gas flow; thus, various polytypic structures were produced simultaneously in a controlled manner. The nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires by visualizing the polytypic structu

SUBMITTER: Park K 

PROVIDER: S-EPMC6648578 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature