Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains.

ABSTRACT: Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm² V^-1 s^-1 and a greatly reduced sheet resistance of only 130 ohms square^-1. The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier

SUBMITTER: Lin L 

PROVIDER: S-EPMC6688872 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature