High mobility Si_0.15Ge_0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework.

ABSTRACT: High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si_0.15 Ge_0.85 film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890 °C substrate temperate is impractical for commercial device manufacturing due to long thermal soak, loading time, and costly process. To leverage the practical SiGe device applications, the Molten Target Sputtering (MTS) techniques is developed. The MTS is an economic and robust process from high flux density and liquid-state of molecules benefits. At 500 °C, the lowest substrate temperature, high mobility Si_0.15Ge_0.85 film with continues morphology and 9

SUBMITTER: Kim HJ 

PROVIDER: S-EPMC6689090 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature