Initial Growth Study of Atomic-Layer Deposition of Al₂O₃ by Vibrational Sum-Frequency Generation.

ABSTRACT: The initial growth during the atomic-layer deposition (ALD) of Al₂O₃ using trimethylaluminum (TMA) and water was studied on two starting surfaces: SiO₂ and -H-terminated Si(111) [H/Si(111)]. In situ spectroscopy ellipsometry (SE) showed virtually immediate growth of Al₂O₃ on both surfaces, although for H/Si(111) a reduced growth-per-cycle was observed in the initial 20 cycles. The underlying surface chemistry during the initial cycles of ALD was monitored with in situ broadband sum-frequency generation (BB-SFG) spectroscopy. For the SiO₂ surface, the -CH₃ surface groups were followed revealing that only the first TMA half-cycle deviates from the steady-growth regime. The reaction cross section of the initial TMA h

SUBMITTER: Vandalon V 

PROVIDER: S-EPMC6694409 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature