Reproducible Performance Improvements to Monolayer MoS₂ Transistors through Exposed Material Forming Gas Annealing.

ABSTRACT: Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of two-dimensional (2D) materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interface of a 2D material and gate oxide must be overcome to realize robust devices with high yields. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (∼5000 μm²), monolayer MoS₂ with a yield of 85%. A central element of this process is an exposed material forming gas anneal (EM-FGA) that results in uniform FET performance metrics (i.e., field-effect mobilities, threshold voltages, and contact performance). Complementary analytical measur

SUBMITTER: Guros NB 

PROVIDER: S-EPMC6702458 | biostudies-literature | 2019 May

REPOSITORIES: biostudies-literature