Transport Properties and Finite Size Effects in β-Ga₂O₃ Thin Films.

ABSTRACT: Thin films of the wide band gap semiconductor β-Ga₂O₃ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown (100)-orientated β-Ga₂O₃ films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115 ± 10) cm²/Vs) in thicker films (>150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5 ± 0.5) cm²/Vs for a 28 nm thin fi

SUBMITTER: Ahrling R 

PROVIDER: S-EPMC6739305 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature