Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe₂ Field-Effect Transistors.

ABSTRACT: We investigated the electrical and optoelectronic characteristics of ambipolar WSe₂ field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe₂ surface, which ensured higher p-type conductivity and the shift of the transfer curve to the positive gate voltage direction. Besides, considerably improved photoswitching response characteristics of ambipolar WSe₂ FETs were achieved by the annealing in ambient. To explore the origin of the changes in electrical and optoelectronic properties, the analyses via X-ray photoelectron, Raman, and photoluminescence spectroscopies were performed. From these analyses, it turned out that WO₃ l

SUBMITTER: Seo J 

PROVIDER: S-EPMC6742682 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature