Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition.

ABSTRACT: Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy, X-ray photoelectron spectroscopy, cathodoluminescence spectroscopy, optical microscopy, atomic force microscopy, and scanning electron microscopy. It was noticed that, in respect of both the substrates, when growth time and/or precursor-to-substrate distance is increased, thickness of the nanowires around the etch pits remains unaltered, but there is variation in the density of nanowires. In addition, formation of gallium nitride microwires within the etch pits was also observed on etc

SUBMITTER: Sankaranarayanan S 

PROVIDER: S-EPMC6751544 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature