Uprooting defects to enable high-performance III-V optoelectronic devices on silicon.

ABSTRACT: The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~10⁸ cm^-2 to a lower-limit of ~10⁴ cm

SUBMITTER: Bioud YA 

PROVIDER: S-EPMC6754402 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature