High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction.

ABSTRACT: Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p-n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm-2 light illumination, our device showed a photoresponsivi

SUBMITTER: Xiao Y 

PROVIDER: S-EPMC6780170 | biostudies-literature | 2019 Aug

REPOSITORIES: biostudies-literature