Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors.

ABSTRACT: Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-la

SUBMITTER: Moreira M 

PROVIDER: S-EPMC6781023 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature