Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices.

ABSTRACT: Oxygen ions' migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT). However, the lack of experimental evidence observed directly from the microscopic level of materials and applicable understanding of how OPT improves the RS properties will cause significant difficulties in its further application. In this work, we apply scanning probe microscope (SPM)-based techniques to study the OPT-enhanced RS performance in prototypical HfOx based memristive devices through in situ morphology and electrical measurements. It is first found that the structural deformations in HfOx nanofilm induced by migration of oxygen ion

SUBMITTER: Wang D 

PROVIDER: S-EPMC6836033 | biostudies-literature | 2019 Sep

REPOSITORIES: biostudies-literature