Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast.

ABSTRACT: We demonstrate the implications of very low voltage operation (<1 kV) of a scanning electron microscope for imaging low-dimensional nanostructures where standard voltages (2-5 kV) involve a beam penetration depth comparable to the cross-section of the nanostructures. In this common situation, image sharpness, contrast quality and resolution are severely limited by emission of secondary electrons far from the primary beam incidence point. Oppositely, very low voltage operation allows reducing the beam-specimen interaction to an extremely narrow and shallow region around the incidence point, enabling high-resolution and ultra-shallow topographic contrast imaging by high-angle backscattered electrons detection on the one hand, and depth-tunable material contrast imaging by low-angle backscatt

SUBMITTER: Zarraoa L 

PROVIDER: S-EPMC6838169 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature