Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit.

ABSTRACT: Two-dimensional heterostructures combined with vertical geometries are candidates to probe and utilize the physical properties of atomically-thin materials. The vertical configuration enables a unique form of hot-carrier spectroscopy as well as atomic-scale devices. Here, we present the room-temperature evolution of heteroepitaxial perovskite hot-electron transistors using a SrRuO₃ base down to the monolayer limit (∼4 Å). As a fundamental electronic probe, we observe an abrupt transition in the hot-electron mean free path as a function of base thickness, coinciding with the thickness-dependent resistive transition. As a path towards devices, we demonstrate the integrated synthesis of perovskite one-dimensional electrical edge contacts using water-soluble and growth-compatible Sr

SUBMITTER: Kim BSY 

PROVIDER: S-EPMC6874601 | biostudies-literature | 2019 Nov

REPOSITORIES: biostudies-literature