Tailoring Threshold Voltages of Printed Electrolyte-Gated Field-Effect Transistors by Chromium Doping of Indium Oxide Channels.

ABSTRACT: Printed systems spark immense interest in industry, and for several parts such as solar cells or radio frequency identification antennas, printed products are already available on the market. This has led to intense research; however, printed field-effect transistors (FETs) and logics derived thereof still have not been sufficiently developed to be adapted by industry. Among others, one of the reasons for this is the lack of control of the threshold voltage during production. In this work, we show an approach to adjust the threshold voltage (V _th) in printed electrolyte-gated FETs (EGFETs) with high accuracy by doping indium-oxide semiconducting channels with chromium. Despite high doping concentrations achieved by a wet chemical process during precursor ink preparation,

SUBMITTER: Neuper F 

PROVIDER: S-EPMC6906765 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature