Engineering of self-rectifying filamentary resistive switching in LiNbO₃ single crystalline thin film via strain doping.

ABSTRACT: The abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO₃ (LNO) single crystalline thin films are fabricated on Pt/SiO₂/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive f

SUBMITTER: You T 

PROVIDER: S-EPMC6911103 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature