Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO₂.

ABSTRACT: Correlation between the resistive switching characteristics of Au/Zn-doped CeO₂/Au devices and ionic mobility of CeO₂ altered by the dopant concentration were explored. It was found that the ionic mobility of CeO₂ has a profound effect on the operating voltages of the devices. The magnitude of operating voltage was observed to decrease when the doping concentration of Zn was increased up to 14%. After further increasing the doping level to 24%, the device hardly exhibits any resistive switching. At a low doping concentration, only isolated V_o existed in the CeO₂ lattice. At an intermediate doping concentration, the association between dopant and V_o formed (Zn, V_o)^× defect clusters. Low number density of

SUBMITTER: Rehman S 

PROVIDER: S-EPMC6920484 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature