Exploitation of Thermoresponsive Switching Organic Field-Effect Transistors.

ABSTRACT: In this work, a novel thermoresponsive switching transistor is developed through the rational design of active materials based on the typical field-effect transistor (FET) device configuration, where the active material is composed of a blend of a thermal expansion polymer and a polymeric semiconductor. Herein, polyethylene (PE) is employed as the thermal expansion polymer because of its high volume expansion coefficient near its melting point (90-130 °C), which similarly corresponds to the overheating point that would cause damage or cause fire in the devices. It is revealed that owing to the thermistor property of PE, the FET characteristics of the derived device will be largely decreased at high temperatures (100-120 °C). It is because the high volume expansion of PE at such high temper

SUBMITTER: Cheng YH 

PROVIDER: S-EPMC6933784 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature