Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications.

ABSTRACT: Three-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO₄ (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr₂Ge₂Te

SUBMITTER: Shuang Y 

PROVIDER: S-EPMC6934602 | biostudies-literature | 2019 Dec

REPOSITORIES: biostudies-literature