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An electrically pumped surface-emitting semiconductor green laser.

ABSTRACT: Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)-free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.

SUBMITTER: Ra YH

PROVIDER: S-EPMC6941916 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature

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An electrically pumped surface-emitting semiconductor green laser.

Ra Yong-Ho YH Rashid Roksana Tonny RT Liu Xianhe X Sadaf Sharif Md SM Mashooq Kishwar K Mi Zetian Z

Science advances 20200103 1

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)-free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold curre ...[more]

PMID: 31921999

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