All-inorganic quantum dot assisted enhanced charge extraction across the interfaces of bulk organo-halide perovskites for efficient and stable pin-hole free perovskite solar cells.
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ABSTRACT: In spite of achieving high power conversion efficiency (PCE), organo-halide perovskites suffer from long term stability issues. Especially the grain boundaries of polycrystalline perovskite films are considered as giant trapping sites for photo-generated carriers and therefore play an important role in charge transportation dynamics. Surface engineering via grain boundary modification is the most promising way to resolve this issue. A unique antisolvent-cum-quantum dot (QD) assisted grain boundary modification approach has been employed for creating monolithically grained, pin-hole free perovskite films, wherein the choice of all-inorganic CsPbBr x I3-x (x = 1-2) QDs is significant. The grain boundary filling by QDs facilitates the formation of compact films with 1-2 μm perovskite grains a
SUBMITTER: Ghosh D
PROVIDER: S-EPMC6979373 | biostudies-literature | 2019 Nov
REPOSITORIES: biostudies-literature
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