High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field.

ABSTRACT: Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity. Herein, in this study, the bias-modulated MaCE process was performed, showing the etching rates more than four times of magnitude than that of typical bias-free MaCE with large-area uniformity. It was found that the field-mediated hole rectification overwhelmed the effect of retarded diffusivity from reactive ions, and thus the dynamics of distributed etching were therefore transferred to the directional etching behaviors. In addition, the etching orientation could be also ma

SUBMITTER: Chien PJ 

PROVIDER: S-EPMC6990330 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature