GaAs_1-xBi_x growth on Ge: anti-phase domains, ordering, and exciton localization.

ABSTRACT: The dilute bismide alloy GaAs_1-xBi_x has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge substrates is comprehensively investigated. Analysis of atomic-resolution anti-phase domain (APD) images in the direct-epitaxy revealed a high-density of Ga vacancies and a reduced Bi content at their boundaries. This likely played a key role in the preferential dissolution of Bi atoms from the APD interiors and Bi spiking in Ge during thermal annealing. Introduction of GaAs buffer on offcut Ge largely suppressed the formation of APDs, producing high-quality bismide with single-vari

SUBMITTER: Paulauskas T 

PROVIDER: S-EPMC7005183 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature