Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor.

ABSTRACT: We investigate the effect of applied gate and drain voltages on the charge transport properties in a zinc oxide (ZnO) nanowire field effect transistor (FET) through temperature- and voltage-dependent measurements. Since the FET based on nanowires is one of the fundamental building blocks in potential nanoelectronic applications, it is important to understand the transport properties relevant to the variation in electrically applied parameters for devices based on nanowires with a large surface-to-volume ratio. In this work, the threshold voltage shift due to a drain-induced barrier-lowering (DIBL) effect was observed using a Y-function method. From temperature-dependent current-voltage (I-V) analyses of the fabricated ZnO nanowire FET, it is found that space charge-limited conduction (SCLC

SUBMITTER: Yoon J 

PROVIDER: S-EPMC7014215 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature