Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability.

ABSTRACT: The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm^-2) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anti

SUBMITTER: Nawaz A 

PROVIDER: S-EPMC7016126 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature