Improved contacts to p-type MoS₂ transistors by charge-transfer doping and contact engineering.

ABSTRACT: MoS₂ is known to show stubborn n-type behavior due to its intrinsic band structure and Fermi level pinning. Here, we investigate the combined effects of molecular doping and contact engineering on the transport and contact properties of monolayer (ML) MoS₂ devices. Significant p-type (hole-transport) behavior was only observed for chemically doped MoS₂ devices with high work function palladium (Pd) contacts, while MoS₂ devices with low work function metal contacts made from titanium showed ambipolar behavior with electron transport favored even after prolonged p-doping treatment. ML MoS₂ transistors with Pd contacts exhibit effective hole mobilities of (2.3 ± 0.7) cm² V^-1 S^-1 and an on/off ratio exceedi

SUBMITTER: Zhang S 

PROVIDER: S-EPMC7047721 | biostudies-literature | 2019

REPOSITORIES: biostudies-literature