On-Chip TaO x -Based Non-volatile Resistive Memory for in vitro Neurointerfaces.

ABSTRACT: The development of highly integrated electrophysiological devices working in direct contact with living neuron tissue opens new exciting prospects in the fields of neurophysiology and medicine, but imposes tight requirements on the power dissipated by electronics. On-chip preprocessing of neuronal signals can substantially decrease the power dissipated by external data interfaces, and the addition of embedded non-volatile memory would significantly improve the performance of a co-processor in real-time processing of the incoming information stream from the neuron tissue. Here, we evaluate the parameters of TaO x -based resistive switching (RS) memory devices produced by magnetron sputtering technique and integrated with the 180-nm CMOS field-effect transistors as possible candidates for on

SUBMITTER: Zhuk M 

PROVIDER: S-EPMC7055297 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature