Sub-nanosecond memristor based on ferroelectric tunnel junction.

ABSTRACT: Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO₃/Nb:SrTiO₃ ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 10³ A cm^-2. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO₃ electrode with a higher carrier concentration and a metal

SUBMITTER: Ma C 

PROVIDER: S-EPMC7080735 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature