Persistent metallic Sn-doped In₂O₃ epitaxial ultrathin films with enhanced infrared transmittance.

ABSTRACT: Infrared transparent electrodes (IR-TEs) have recently attracted much attention for industrial and military applications. The simplest method to obtain high IR transmittance is to reduce the electrode film thickness. However, for films several tens of nanometres thick, this approach unintentionally suppresses conduction due to surface electron scattering. Here, we demonstrate low sheet resistance (<400 Ω □^-1 at room temperature) and high IR transmittance (>65% at the 2.5-μm wavelength) in Sn-doped In₂O₃ (ITO) epitaxial films for the thickness range of 17-80 nm. A combination of X-ray spectroscopy and ellipsometry measurements reveals a persistent electronic bandstructure in the 8-nm-thick film compared to much thicker films. This indicates that the metallic

SUBMITTER: Kim D 

PROVIDER: S-EPMC7080801 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature