Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene.

ABSTRACT: The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present

SUBMITTER: Muller M 

PROVIDER: S-EPMC7153506 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature