Doping-free complementary WSe₂ circuit via van der Waals metal integration.

ABSTRACT: Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. Here, we report a doping-free strategy to modulate the polarity of WSe₂ transistors using same contact metal but different integration methods. By applying low-energy van der Waals integration of Au electrodes, we observed robust and optimized p-type transistor behavior, which is in great contrast to the transistors fabricated on the same WSe₂ flake using conventional deposited Au contacts with pronounced n-type characteristics. With the ability to switch majority carrier type and to achieve optimized contact for both

SUBMITTER: Kong L 

PROVIDER: S-EPMC7171173 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature