Increased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons.

ABSTRACT: A novel small signal equivalent circuit model is proposed in the inversion regime of metal/(ZnO, ZnMnO, and ZnCoO) semiconductor/Si₃N₄ insulator/p-Si semiconductor (MSIS) structures to describe the distinctive nonlinear frequency dependent capacitance (C-F) and conductance (G-F) behaviour in the frequency range from 50 Hz to 1 MHz. We modelled the fully depleted ZnO thin films to extract the static dielectric constant (ε_r) of ZnO, ZnMnO, and ZnCoO. The extracted enhancement of static dielectric constant in magnetic n-type conducting ZnCoO (ε_r ≥ 13.0) and ZnMnO (ε_r ≥ 25.8) in comparison to unmagnetic ZnO (ε_r = 8.3-9.3) is related to the electrical polarizability of donor-type bound magnetic polarons (BMP) in the several hundr

SUBMITTER: Vegesna SV 

PROVIDER: S-EPMC7174340 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature