Highly Efficient Near-Infrared Light-Emitting Diodes Based on Chloride Treated CdTe/CdSe Type-II Quantum Dots.

ABSTRACT: Quantum dot light-emitting diodes (QLEDs) have been considered as the most promising candidate of light sources for the new generation display and solid-state lighting applications. Especially, the performance of visible QLEDs based on II-VI quantum dots (QDs) has satisfied the requirements of the above applications. However, the optoelectronic properties of the corresponding near-infrared (NIR) QLEDs still lag far behind the visible ones. Here, we demonstrated the highly efficient NIR QLEDs based on chloride treated CdTe/CdSe type-II QDs. The maximum radiant emittance and peak external quantum efficiency (EQE) increased by 24.5 and 26.3%, up to 66 mW/cm2 and 7.2% for the corresponding devices based on the chloride treated CdTe/CdSe QDs with the PL peak located at 788 nm, respectively, com

SUBMITTER: Feng H 

PROVIDER: S-EPMC7182655 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature