Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering.

ABSTRACT: As the charge transport layer of quantum dot (QD) light-emitting diodes (QLEDs), metal oxides are expected to be more stable compared with organic materials. However, the efficiency of metal oxide-based all-inorganic QLEDs is still far behind that of organic-inorganic hybrid ones. The main reason is the strong interaction between metal oxide and QDs leading to the emission quenching of QDs. Here, we demonstrated nickel oxide (NiO_x)-based all-inorganic QLEDs with a maximum current efficiency of 20.4 cd A^-1 and external quantum efficiency (EQE) of 5.5%, which is among the most efficient all-inorganic QLEDs. The high efficiency is mainly attributed to the aluminum oxide (Al₂O₃) deposited at the NiO_x/QDs interface to suppress the strong qu

SUBMITTER: Xu Q 

PROVIDER: S-EPMC7191064 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature