Area-Selective Atomic Layer Deposition of Two-Dimensional WS₂ Nanolayers.

ABSTRACT: With downscaling of device dimensions, two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as WS₂ are being considered as promising materials for future applications in nanoelectronics. However, at these nanoscale regimes, incorporating TMD layers in the device architecture with precise control of critical features is challenging using current top-down processing techniques. In this contribution, we pioneer the combination of two key avenues in atomic-scale processing: area-selective atomic layer deposition (AS-ALD) and growth of 2D materials, and demonstrate bottom-up processing of 2D WS₂ nanolayers. Area-selective deposition of WS₂ nanolayers is enabled using an ABC-type plasma-enhanced ALD process involving acetylacetone (Hac

SUBMITTER: Balasubramanyam S 

PROVIDER: S-EPMC7217612 | biostudies-literature | 2020 May

REPOSITORIES: biostudies-literature