Tungsten-Doped Zinc Oxide and Indium-Zinc Oxide Films as High-Performance Electron-Transport Layers in N-I-P Perovskite Solar Cells.

ABSTRACT: Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N-I-P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N-I-P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images

SUBMITTER: Kang JH 

PROVIDER: S-EPMC7240459 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature