Atomic-Resolution EDX, HAADF, and EELS Study of GaAs_1-xBi_x Alloys.

ABSTRACT: The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several distinctly MBE grown GaAs_1-xBi_x alloys. Statistical quantification of atomic-resolution HAADF images, as well as numerical simulations, are employed to interpret the contrast from Bi-containing columns at atomically abrupt (001) GaAs-GaAsBi interface and the onset of CuPt-type ordering. Using monochromated EELS mapping, bulk plasmon energy red-shifts are examined in a sample exhibiting phase-separated domains. This suggests a simple method to investigate local GaAsBi unit-cell volum

SUBMITTER: Paulauskas T 

PROVIDER: S-EPMC7248167 | biostudies-literature | 2020 May

REPOSITORIES: biostudies-literature