Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors.

ABSTRACT: Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for

SUBMITTER: El Abbassi M 

PROVIDER: S-EPMC7254832 | biostudies-literature | 2020 May

REPOSITORIES: biostudies-literature