Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors.

ABSTRACT: The development of van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and associated conductivity with nanometer spatial resolution. Here, we demonstrate the general capability of near-field scanning microwave microscopy (SMM) to image and study the local carrier type and associated conductivity in operando by studying ambiploar field-effect transistors (FETs) of the 1D vdW material tellurium in 2D form. To quantitatively understand electronic variations across the device, we produce nanometer-resolved maps of the local carrier equivalence backgate voltage. We show that the global device conductivity minimum deter

SUBMITTER: Berweger S 

PROVIDER: S-EPMC7259612 | biostudies-literature | 2019 Feb

REPOSITORIES: biostudies-literature