Nonvolatile ferroelectric field-effect transistors.

ABSTRACT: Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO₃ transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the

SUBMITTER: Chai X 

PROVIDER: S-EPMC7272614 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature