Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor.

ABSTRACT: Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this

SUBMITTER: Soltani A 

PROVIDER: S-EPMC7272618 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature