Dataset Information

Tunable resistivity of correlated VO₂(A) and VO₂(B) via tungsten doping.

ABSTRACT: Applications of correlated vanadium dioxides VO₂(A) and VO₂(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO₂(A) and VO₂(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V_1-xW_xO₂(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V_1-xW_xO₂(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V-V distances or electron-doping-induced band filling in V_1-xW_xO₂(A), while electron scattering induced by disorder plays a more dominant role in V_1-xW_xO₂(B). The tunable resistivity makes correlated VO₂(A) and VO₂(B) appealing for next-generation electronic devices.

SUBMITTER: Choi S

PROVIDER: S-EPMC7297976 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Tunable resistivity of correlated VO2(A) and VO2(B) via tungsten doping.

Choi Songhee S Ahn Gihyeon G Moon Soon Jae SJ Lee Shinbuhm S

Scientific reports 20200616 1

Applications of correlated vanadium dioxides VO2(A) and VO2(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO2(A) and VO2(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V1-xWxO2(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V1-xW< ...[more]

PMID: 32546737

Similar Datasets

Project description:High-quality VO[Formula: see text] films were fabricated on top of c-Al[Formula: see text]O[Formula: see text] substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO[Formula: see text] heterostructure were conducted. Graphene layers were placed on top of [Formula: see text] 50 and [Formula: see text] 100 nm VO[Formula: see text]. The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO[Formula: see text], to avoid the strain effect from lattice mismatch and to study how VO[Formula: see text] can affect the graphene layer. Slight increases in graphene/VO[Formula: see text] T[Formula: see text] compared to pure VO[Formula: see text] by [Formula: see text] 1.9 [Formula: see text]C and [Formula: see text] 3.8 [Formula: see text]C for CVD graphene on 100 and 50 nm VO[Formula: see text], respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T[Formula: see text] may originate from a large difference in the thermal conductivity between graphene and VO[Formula: see text]. Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G[Formula: see text] and G[Formula: see text], were observed on graphene/VO[Formula: see text] (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO[Formula: see text] phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm[Formula: see text] at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO[Formula: see text] samples. Other electronic interactions between graphene and VO[Formula: see text] are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO[Formula: see text] and introduce some new applications that utilize the controllable structural properties of graphene via the VO[Formula: see text] phase transition.

Dataset Information

Tunable resistivity of correlated VO₂(A) and VO₂(B) via tungsten doping.

Publications

Tunable resistivity of correlated VO<sub>2</sub>(A) and VO<sub>2</sub>(B) via tungsten doping.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets