Tunable resistivity of correlated VO₂(A) and VO₂(B) via tungsten doping.

ABSTRACT: Applications of correlated vanadium dioxides VO₂(A) and VO₂(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO₂(A) and VO₂(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V_1-xW_xO₂(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V_1-xW_xO₂(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V-V distances or electron-doping-induced band filling in V_1-x

SUBMITTER: Choi S 

PROVIDER: S-EPMC7297976 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature